PART |
Description |
Maker |
IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Replaces Two Discrete MOSFETs
|
International Rectifier
|
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范,以.1A的,80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation] Harris Semiconductor Harris, Corp.
|
IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
IRFD213 IRFD210 IRFD211 IRFD212 |
(IRFD210 - IRFD213) N Channel Power MOSFETs 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS
|
Harris Semiconductor Harris Corporation
|
FDS8333C |
30V N & P-Channel PowerTrench MOSFETs 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 30V N & P-Channel PowerTrench MOSFETs
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IXFH80N10 IXFT80N10 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-247AD Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a> N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|